منابع مشابه
A Novel Pd-based Ohmic Contact System for n-type GaAs: A Structural, Morphological and Electrical Investigation
A novel Pd-based Ohmic contact system is developed for n-GaAs. Metallization samples are annealed at various temperatures and systematically characterized using current-voltage (I-V) measurements, Tencor surface profilometry measurements, Scanning electron microscopy (SEM) and Secondary ion mass spectrometry (SIMS). Tencor measurements and SEM are employed to investigate the surface morphology ...
متن کاملA Thermodynamic Approach to Ohmic Contact Formation to p-GaN
A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
متن کاملOhmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs
The development and characterization of high-performance nanocontacts to n-GaAs are reported. The nanocontacts can be made to both undoped and p-doped low-temperature-grown GaAs ~LTG:GaAs! cap layers. The geometry of the nanocontact is well characterized and requires the deposition of a 4 nm single-crystalline Au cluster onto an ohmic contact structure which features a chemically stable LTG:GaA...
متن کاملLow resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN
The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...
متن کاملHigh-Reflectivity A1-Pt Nanostructured Ohmic Contact to p-GaN
The effect of nanoscale Pt islands on the electrical characteristics of contacts to p-type gallium nitride (GaN) has been investigated to explore the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. An as-deposited Al contact to p-GaN with a net hole concentration of 3 × 10 cm−3 was rectifying. However, an Al contact with nanoscale Pt islands...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1993
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.84.804